Optical and electrical doping of silicon with holmium
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چکیده
منابع مشابه
Theoretical Investigation of Doping Concentration in Silicon Semiconductor Using Optical Principle
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1999
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(98)00807-6